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HAT2217C
Silicon N Channel MOS FET Power Switching
REJ03G0449-0300 Rev.3.00 May 19.2005
Features
* Low on-resistance RDS(on) = 105 m typ. (at VGS = 4.5 V) * Low drive current. * High density mounting * 4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2345 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR
Note 2
Ratings 60 +20 / -10 3 12 3
Unit V V A A A W C C
Channel dissipation Pch 1.25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), PW 5 s
Rev.3.00 May 19, 2005 page 1 of 6
HAT2217C
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min. 60 +20 -10 -- -- 1 -- -- 2.8 -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- 105 126 4.3 275 40 16 4.5 0.8 0.7 5 11 35 3 0.85 Max. -- -- 10 1 2 132 183 -- -- -- -- -- -- -- -- -- -- -- 1.25 Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 / -8 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 1.5 A, VGS = 10 V Note3 ID = 1.5 A, VGS = 4.5 V Note3 ID = 1.5 A, VGS = 10 V Note3 VGS = 0 f = 1 MHz VDS = 10 V VGS = 10 V VDS = 10 V ID = 3 A VGS = 10 V ID = 1.5 A VDD = 10 V RL = 6.6 , Rg = 4.7 IF = 3 A, VGS = 0
Rev.3.00 May 19, 2005 page 2 of 6
HAT2217C
Main Characteristics
Power vs. Temperature Derating 1.6
Pch (W)
100 30
ID (A)
Maximum Safe Operation Area
Ta = 25C,1shot pulse
100 s
When using the FR4 board.
1.2
10 3 1 0.3 0.1 0.03
10 s
Power Dissipation
Drain Current
0.8
PW
1
= 10
m
s
s
m
0.4
Operation in this
area is limited by RDS(on)
0
50
100
150 Ta (C)
200
0.01 0.03 0.1 0.3
1
3
10 30 100 VDS (V)
Ambient Temperature
Drain to Source Voltage
Typical Output Characteristics 10 5V 4V 10 V Pulse Test
3.5 V
Typical Transfer Characteristics 10 VDS = 10 V Pulse Test
ID (A)
-25C 25C
ID (A)
8
8
6
Drain Current
3V
Drain Current
6 Tc = 75 C
4
2.5 V VGS = 2 V
4
2
2
0
2 4 6 Drain to Source Voltage
8 10 VDS (V)
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage 800
Drain to Source Saturation Voltage VDS(on) (mV)
Pulse Test
Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test
600 -4.5V 400 ID = 3 A 200 1.5 A 0.5 A 0 4 8 12 16 VGS (V) 20 10 0.1 1 Drain Current 10 ID (A) 100 100 VGS = 10 V
Gate to Source Voltage
Rev.3.00 May 19, 2005 page 3 of 6
HAT2217C
Static Drain to Source On State Resistance vs. Temperature 500 Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 30
400
Tc = -25C 10 25C 3 1 0.3 0.1 0.1
VDS = 10 V Pulse Test
300 ID = 0.5,1.5 A 3A 200 VGS = 10V 3A 4.5V 0 -25 0 25 50 0.5,1.5 A Pulse Test 75 100 125 150 Tc (C) Case Temperature
75C
100
0.3
1
3
10
30
100
Drain Current
ID (A)
Dynamic Input Characteristics 80 16
10000
Typical Capacitance vs. Drain to Source Voltage
VDS (V)
VGS (V)
ID = 3 A 60 VDD = 10 V 25 V 50 V VDD 40 VGS VDD = 50 V 25 V 10 V 8 12
3000
VGS = 0 f = 1 MHz
Capacitance C (pF)
1000 300 100 30 10 3 1
Drain to Source Voltage
Gate to Source Voltage
Ciss
Coss Crss
20
4
0
2 4 Gate Charge
6 8 Qg (nC)
0 10
0
10
20
30
40
50 VDS (V)
60
Drain to Source Voltage
Reverse Drain Current vs. Source to Drain Voltage 10
Switching Characteristics 1000
IDR (A)
8 6
10 V
tr
Switching Time t (ns)
Reverse Drain Current
100
td(off)
VGS = 0 , -10 V
4
td(on) 10 tf 1 0.01 0.03
2 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage
0.1
0.3
1
3
10
Drain Current
ID (A)
Rev.3.00 May 19, 2005 page 4 of 6
HAT2217C
Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Vin 10 V VDS = 10 V Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform
90%
Rev.3.00 May 19, 2005 page 5 of 6
HAT2217C
Package Dimensions
JEITA Package Code RENESAS Code PWSF0006JA-A Package Name CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A S A b
L
Reference Symbol
Dimension in Millimeters
e A2 A
yS
A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas
A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1
Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
c
A-A Section
1.65
Ordering Information
Part Name HAT2217C-EL-E Quantity 3000 pcs Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 May 19, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0

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